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This image shows
a surface gated quantum dot device with submicron airbridge on GaAs/AlGaAs.
The fabrication is done by e-beam lithography of PMMA, PMGI (a different
kind of e-beam sensitive polymer) and metallization. The center dot
was placed with an alignment accuracy of 20 nm using the NPGS alignment feature.
This work was done by Dr. Yan Feng at the Institute for Microstructural Sciences,
National Research Council of Canada.